NICS Tsinghua University · Department of Electronic Engineering

NICS-AIM

AI × Mixed-signal

Led by Prof. Huazhong Yang and Prof. Xueqing Li

  • 2Members
  • 191Publications
  • 2Research areas
Members of the NICS group in front of the Tsinghua Gate
Our group in front of the Tsinghua Gate

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Join our lab anytime — exciting research in Compute-in-Memory, D/A converters, and beyond-CMOS circuits.

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Recent publications

All publications
  1. 2026

    A Full-Digital Heterogenous Computing-in-Memory with Dual-Bit Serialized Weight Stream and Ping-Pong Computing for Efficient Transformer Acceleration

    IEEE Transactions on Circuits and Systems I: Regular Papers Journal

  2. 2026

    HEIRS-PS: Hybrid Three-dimensional RRAM- and SRAM-CIM for Pipelined Sparse Multi-Task Transformer Acceleration

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems Journal

  3. 2026

    A Folded-Differential Switched-Capacitor SRAM CIM Macro With Scalable MAC Sizes for TinyML Inference

    IEEE SOLID-STATE CIRCUIT LETTERS Journal

  4. 2026

    From Analog to Digital-Assisted Techniques: Modern RF DAC Design for High Speed and Dynamic Range

    Electromagnetic Science Journal

  5. 2026

    ROM-SRAM Hybrid Compute-in-Memory for Edge AI: Circuits, Architectures and Challenges

    The Journal of Supercomputing Journal

  6. 2026

    FSDB: A Folded-Store Dynamic-Broaden Hybrid Compute-in-ROM/SRAM Architecture for Deploying Large-Scale DNNs On-Chip

    Design, Automation & Test in Europe Conference & Exhibition (DATE) Conference

  7. 2026

    EGO: Efficient Compression of Unstructured Sparse DNNs for Compute-in-Memory based on Graph Minimum-Cost Matching Optimization

    Design, Automation & Test in Europe Conference & Exhibition (DATE) Conference

  8. 2026

    A Heterogeneous CIM Architecture with Splittable Non-Volatile Computing-in-SRAM Cell-Pairs Enabling Efficient On-Chip Neural Network Inference

    IEEE Transactions on Very Large Scale Integration (VLSI) Systems Journal

  9. 2026

    An NVM Non-Idealities Mitigation Solution Using Cell-Clustered Calibration for Analog High-Density Edge Multi-Level Cell Compute-in-Memory

    IEEE Transactions on Circuits and Systems I: Regular Papers Journal

  10. 2025

    Charge-domain content addressable memory based on ferroelectric capacitive memory for reliable and energy-efficientone-shot learning

    Nature Communications Journal